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[14]Transistors


[3643]G... transistors
G20N60B3D 40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Gehäuse TO247G20N60B3D (45869)
*40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode, Gehäuse: TO247 =R4036
 Stück 28.56 EURincl. VAT
plus Shipping
buy 
G40N60B3 70A 600V UFS Series N-Channel IGBTG40N60B3 (45870)
*70A, 600V, UFS Series N-Channel IGBT,
 on demand
request 
GT10J303 Trans IGBT Chip N-CH 600V 10A 30000mWGT10J303 (87460)
*Trans IGBT Chip N-CH 600V 10A 30000mW
 on demand
request 
GT15J311 Trans. IGBT N-CH 600 V 15 A TO263 D2PAK (Obsolete)GT15J311 (84234)
*Trans. IGBT, N-CH, 600 V, 15 A, TO263, D2PAK (Obsolete)
 on demand
request 
GT15Q102 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONSGT15Q102 (75207)
*INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE, HIGH POWER SWITCHING APPLICATIONS
 on demand
request 
GT20J301 Silicon N-Channel IGBT High Power Switching ApplicationsGT20J301 (79926)
*Silicon N-Channel IGBT High Power Switching Applications
 on demand
request 
GT25J101 Silicon N-Channel IGBT 600 VGT25J101 (76644)
*Silicon N-Channel, IGBT, 600 V
 on demand
request 
GT25Q101 HalbleiterGT25Q101 (61908)
*Halbleiter
 on demand
request 
GT40T101 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONSGT40T101 (75205)
*INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE, HIGH POWER SWITCHING APPLICATIONS
 on demand
request 
GT40T301 Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter SwitchingGT40T301 (75611)
*Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching Applicatios
 on demand
request 
GT60M102 IGBT 900 V 60 A 200 W 350/800 nsGT60M102 (78290)
*IGBT, 900 V, 60 A, 200 W, 350/800 ns
 on demand
request 
GT60M104 IGBT 900 V 60 A 200 W 350/500 ns Gehäuse TO264GT60M104 (45873)
*IGBT, 900 V, 60 A, 200 W, 350/500 ns, Gehäuse: TO264,
 on demand
request 
GT60M303 Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching ApplicationsGT60M303 (63724)
*Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Ersatz für GT60M301 und GT60M104
 Stück 26.18 EURincl. VAT
plus Shipping
buy 
GT80J101 INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONSGT80J101 (45872)
*INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS 600 V, 80 A, tf 0.4 us, VCE 3.5 V
 on demand
request 
GT8Q102 IGBT N-CHANNELGT8Q102 (75206)
*IGBT, N-CHANNEL
 on demand
request 


[ 12.04.2024 | Hinkel Elektronik | Impressum | AGB | info@hinkel-elektronik.com ]

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