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ONLINE-SHOPSHOP: G... transistors
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 | [14] | Transistors |

 | G20N60B3D (45869)
* | 40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode, Gehäuse: TO247 =R4036 |
| Stück 28.56 EUR | incl. VAT plus Shipping | |
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 | G40N60B3 (45870)
* | 70A, 600V, UFS Series N-Channel IGBT, |
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 | GT10J303 (87460)
* | Trans IGBT Chip N-CH 600V 10A 30000mW |
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 | GT15J311 (84234)
* | Trans. IGBT, N-CH, 600 V, 15 A, TO263, D2PAK (Obsolete) |
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 | GT15Q102 (75207)
* | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE, HIGH POWER SWITCHING APPLICATIONS |
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 | GT20J301 (79926)
* | Silicon N-Channel IGBT High Power Switching Applications |
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 | GT25J101 (76644)
* | Silicon N-Channel, IGBT, 600 V |
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 | GT40T101 (75205)
* | INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE, HIGH POWER SWITCHING APPLICATIONS |
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 | GT40T301 (75611)
* | Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching Applicatios |
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 | GT60M102 (78290)
* | IGBT, 900 V, 60 A, 200 W, 350/800 ns |
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 | GT60M104 (45873)
* | IGBT, 900 V, 60 A, 200 W, 350/500 ns, Gehäuse: TO264, |
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 | GT60M303 (63724)
* | Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
| Stück 13.80 EUR | incl. VAT plus Shipping | |
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 | GT80J101 (45872)
* | INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS 600 V, 80 A, tf 0.4 us, VCE 3.5 V |
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[ 12.02.2025 | Hinkel Elektronik | Impressum | AGB | info@hinkel-elektronik.com ]
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